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 IRFY9140
MECHANICAL DATA Dimensions in mm (inches)
4.70 5.00 0.70 0.90 3.56 Dia. 3.81
10.41 10.67
P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
0.89 1.14
16.38 16.89
13.39 13.64
123
12.70 19.05
-100V -13A 0.21
10.41 10.92
2.54 BSC
2.65 2.75
* HERMETICALLY SEALED TO-220 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS
TO-220M - Metal Package
Pad 1 - Gate Pad 2 - Drain Pad 3 - Source
* LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg RJC RJA Gate - Source Voltage Continuous Drain Current @ Tcase = 25C Continuous Drain Current @ Tcase = 100C Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 20V -13A -8.2A -52A 60W 0.48W/C -55 to 150C 2.1C/W max. 80C/W max.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
IRFY9140
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated)
Parameter
BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = -13A VDS = 0.5BVDSS VDD = -50V ID = -13A RG = 9.1 ID = -13A ID = -8.2A ID = -13A ID = 250A IDS = -8.2A VDS = 0.8BVDSS TJ = 125C ID = 1mA
Min.
-100
Typ.
Max.
Unit
V
BVDSS Temperature Coefficient of
Reference to 25C
-0.09 0.21 0.24 -2 6.2 25 250 100 -100 1400 600 200 31 3.7 7 60 13 35.2 35 85 85 65 -13 -52 -4
V / C V S( A nA )(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS
pF
nC nC
ns
SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance IS = -13A VGS = 0 IS = -13A TJ = 25C di / dt 100A/s VDD 50V
(from 6mm down drain lead pad to centre of die)
A V ns C
TJ = 25C
-4.2 280 3.6 8.7 8.7
nH
(from 6mm down source lead to centre of source bond pad)
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95


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